Abstract: Cov qauv yooj yim thiab txoj hauv kev ua haujlwm ntawm avalanche photodetector (APD photodetector) tau qhia, cov txheej txheem evolution ntawm cov qauv cuab yeej raug tshuaj xyuas, qhov kev tshawb fawb tam sim no tau sau tseg, thiab kev txhim kho yav tom ntej ntawm APD tau kawm yav tom ntej.
1. Taw qhia
Lub photodetector yog ib qho khoom siv uas hloov cov teeb liab teeb rau hauv cov teeb liab hluav taws xob. Hauv ibsemiconductor photodetector, tus neeg nqa khoom tsim duab zoo siab los ntawm qhov xwm txheej photon nkag mus rau sab nraud Circuit Court nyob rau hauv daim ntawv thov kev tsis ncaj ncees voltage thiab tsim ib qho kev ntsuas photocurrent. Txawm tias nyob rau qhov siab tshaj plaws, tus PIN photodiode tsuas tuaj yeem tsim ib khub ntawm electron-qhov khub ntawm feem ntau, uas yog ib qho khoom siv tsis muaj kev nce hauv. Rau kev teb ntau dua, avalanche photodiode (APD) tuaj yeem siv. Cov nyhuv amplification ntawm APD ntawm photocurrent yog raws li cov nyhuv ionization kev sib tsoo. Nyob rau hauv tej yam kev mob, lub ceev electrons thiab lub qhov yuav tau txais lub zog txaus los tsoo nrog lub lattice los tsim ib tug tshiab khub ntawm electron-qhov. Cov txheej txheem no yog cov tshuaj tiv thaiv kab mob, yog li cov khub ntawm electron-qhov khub tsim los ntawm lub teeb nqus tau tuaj yeem tsim ntau tus khub electron-qhov thiab tsim cov duab loj thib ob. Yog li ntawd, APD muaj kev ua haujlwm siab thiab qhov nce hauv sab hauv, uas txhim kho lub teeb liab-rau-nruab nrab ntawm lub cuab yeej. APD yuav tsuas yog siv nyob rau hauv qhov ntev los yog me me optical fiber kev sib txuas lus nrog lwm yam kev txwv ntawm lub hwj chim kho qhov muag tau txais. Tam sim no, ntau tus kws tshaj lij kho qhov muag pom tau zoo heev txog qhov kev cia siab ntawm APD, thiab ntseeg tias kev tshawb fawb ntawm APD yog qhov tsim nyog los txhim kho kev sib tw thoob ntiaj teb ntawm cov haujlwm muaj feem xyuam.
2. Kev tsim kho ntawmLub avalanche photodetector(APD photodetector)
2.1 Cov khoom siv
(1)Yog photodetector
Si khoom siv tshuab yog cov cuab yeej paub tab uas tau siv dav hauv kev lag luam microelectronics, tab sis nws tsis haum rau kev npaj cov khoom siv nyob rau hauv lub wavelength ntau ntawm 1.31mm thiab 1.55mm uas feem ntau tau txais hauv kev sib txuas lus kho qhov muag.
(2) Ib
Txawm hais tias cov lus teb spectral ntawm Ge APD yog qhov tsim nyog rau cov kev xav tau ntawm kev poob qis thiab tsis tshua muaj kev cuam tshuam hauv kev xa khoom fiber ntau, muaj teeb meem loj hauv cov txheej txheem kev npaj. Tsis tas li ntawd, Ge's electron thiab qhov ionization tus nqi piv yog ze rau () 1, yog li nws nyuaj rau kev npaj cov khoom siv APD ua haujlwm siab.
(3) In0.53Ga0.47As/InP
Nws yog ib txoj hauv kev zoo los xaiv In0.53Ga0.47As raws li cov txheej txheem nqus lub teeb ntawm APD thiab InP ua cov txheej txheem sib npaug. Lub ncov nqus ntawm In0.53Ga0.47As cov khoom siv yog 1.65mm, 1.31mm, 1.55mm wavelength yog hais txog 104cm-1 high absorption coefficient, uas yog cov khoom nyiam rau txheej nqus ntawm lub teeb ntes tam sim no.
(4)InGaAs photodetector/ Hauvphotodetector
Los ntawm kev xaiv InGaAsP raws li lub teeb absorbing txheej thiab InP raws li cov txheej txheem multiplier, APD nrog cov lus teb wavelength ntawm 1-1.4mm, siab quantum efficiency, tsawg tsaus nti tam sim no thiab siab avalanche nce tuaj yeem npaj tau. Los ntawm kev xaiv cov khoom sib txawv alloy, qhov kev ua tau zoo tshaj plaws rau qhov tshwj xeeb wavelengths tiav.
(5) InGaAs/InAlAs
In0.52Al0.48As cov khoom muaj qhov sib txawv band (1.47eV) thiab tsis nqus ntawm lub wavelength ntau ntawm 1.55mm. Muaj pov thawj tias nyias In0.52Al0.48As txheej txheej epitaxial tuaj yeem tau txais cov yam ntxwv zoo dua li InP raws li cov txheej txheem sib xyaw ua ke nyob rau hauv cov xwm txheej ntawm kev txhaj tshuaj electron ntshiab.
(6) InGaAs/InGaAs (P) /InAlAs and InGaAs/In (Al) GaAs/InAlAs
Qhov cuam tshuam ionization tus nqi ntawm cov ntaub ntawv yog qhov tseem ceeb cuam tshuam rau kev ua haujlwm ntawm APD. Cov txiaj ntsig tau pom tias kev sib tsoo ionization tus nqi ntawm cov txheej txheem sib npaug tuaj yeem txhim kho los ntawm kev qhia InGaAs (P) / InAlAs thiab Hauv (Al) GaAs / InAlAs superlattice qauv. Los ntawm kev siv cov qauv superlattice, band engineering tuaj yeem tsim kho lub asymmetric band ntug discontinuity ntawm lub conduction band thiab valence band qhov tseem ceeb, thiab xyuas kom meej tias qhov conduction band discontinuity yog ntau loj dua lub valence band discontinuity (ΔEc> ΔEv). Piv nrog rau InGaAs cov ntaub ntawv loj, InGaAs / InAlAs quantum zoo electron ionization tus nqi (a) yog nce ntxiv, thiab electrons thiab qhov tau txais lub zog ntxiv. Vim ΔEc>> ΔEv, nws tuaj yeem cia siab tias lub zog tau txais los ntawm cov hluav taws xob ua kom cov hluav taws xob ionization ntau dua li qhov kev koom tes ntawm lub zog rau lub qhov ionization tus nqi (b). Qhov piv (k) ntawm electron ionization tus nqi rau qhov ionization tus nqi nce. Yog li ntawd, cov khoom lag luam siab-bandwidth (GBW) thiab cov suab nrov qis tuaj yeem tau txais los ntawm kev siv cov qauv superlattice. Txawm li cas los xij, qhov InGaAs / InAlAs quantum zoo qauv APD, uas tuaj yeem nce tus nqi k, yog qhov nyuaj rau siv rau optical receivers. Qhov no yog vim tias qhov sib npaug ntawm qhov cuam tshuam rau qhov kev ua haujlwm siab tshaj plaws yog txwv los ntawm qhov tsaus ntuj tam sim no, tsis yog lub suab nrov ntau. Nyob rau hauv cov qauv no, qhov tsaus ntuj nti tam sim no tsuas yog tshwm sim los ntawm cov nyhuv tunneling ntawm InGaAs zoo txheej nrog ib tug nqaim band kis, yog li cov kev taw qhia ntawm ib tug dav-band gap quaternary alloy, xws li InGaAsP los yog InAlGaAs, es tsis txhob ntawm InGaAs raws li lub zoo txheej. ntawm cov qauv quantum zoo tuaj yeem cuam tshuam qhov tsaus ntuj tam sim no.
Post lub sij hawm: Nov-13-2023