High-performance self-tsav infrared photodetector

High-kev ua tau zoo tus kheej tsavinfrared photodetector

infraredphotodetectormuaj cov yam ntxwv ntawm kev muaj peev xwm tiv thaiv kev cuam tshuam, muaj zog lub hom phiaj kev paub muaj peev xwm, kev ua haujlwm txhua hnub thiab kev zais zoo. Nws tab tom ua lub luag haujlwm tseem ceeb hauv kev lag luam xws li tshuaj, tub rog, chaw siv tshuab thiab ib puag ncig engineering. Ntawm lawv, tus kheej-tsavphotoelectric nrhiav pomnti uas tuaj yeem ua haujlwm ntawm nws tus kheej yam tsis muaj lwm lub zog ntxiv tau nyiam ntau yam hauv kev tshawb nrhiav infrared vim nws qhov kev ua tau zoo tshwj xeeb (xws li lub zog ywj pheej, siab rhiab heev thiab ruaj khov, thiab lwm yam). Nyob rau hauv sib piv, cov tsoos photoelectric nrhiav chips, xws li silicon-raws li los yog nqaimbandgap semiconductor-raws li infrared chips, tsis tsuas yog yuav tsum tau ntxiv bias voltages tsav kev sib cais ntawm photogenerated carriers los tsim photocurrents, tab sis kuj xav tau ntxiv cua txias tshuab kom txo thermal suab nrov thiab txhim kho lub teb. Yog li ntawd, nws tau dhau los ua qhov nyuaj kom ua tau raws li cov tswv yim tshiab thiab cov kev xav tau ntawm cov tiam tom ntej ntawm infrared detection chips yav tom ntej, xws li kev siv hluav taws xob tsawg, me me, tus nqi qis thiab kev ua haujlwm siab.

Tsis ntev los no, pab pawg tshawb fawb los ntawm Tuam Tshoj thiab Sweden tau tshaj tawm cov tshiab tus pin heterojunction tus kheej-tsav luv luv-yoj infrared (SWIR) photoelectric nrhiav nti raws li graphene nanoribbon (GNR) zaj duab xis / alumina / ib leeg siv lead ua silicon. Raws li kev sib xyaw ua ke ntawm cov nyhuv optical gating tshwm sim los ntawm heterogeneous interface thiab built-in electric teb, lub nti qhia tau hais tias ultra-siab teb thiab nrhiav kom tau kev ua tau zoo ntawm xoom bias voltage. Lub photoelectric detection nti muaj ib tug teb tus nqi siab li 75.3 A / W nyob rau hauv tus kheej-tsav hom, ib tug nrhiav kom tau tus nqi ntawm 7.5 × 10¹⁴ Jones, thiab ib tug sab nraud quantum efficiency ze rau 104%, kev txhim kho qhov kev tshawb nrhiav kev ua tau zoo ntawm tib hom silicon-raws li chips los ntawm cov ntaub ntawv 7 txiav txim ntawm magnitude. Tsis tas li ntawd, nyob rau hauv cov qauv tsav, lub nti cov lus teb tus nqi, kev kuaj xyuas tus nqi, thiab kev ua haujlwm sab nraud quantum tag nrho yog siab li 843 A / W, 10¹⁵ Jones, thiab 105% raws li, tag nrho cov no yog qhov tseem ceeb tshaj plaws hauv kev tshawb fawb tam sim no. Lub caij no, qhov kev tshawb fawb no kuj tau qhia txog kev siv lub ntiaj teb tiag tiag ntawm photoelectric nrhiav nti hauv kev sib txuas lus kho qhov muag thiab duab infrared, qhia txog nws cov peev txheej loj heev.

Txhawm rau txhawm rau kawm txog kev ua haujlwm ntawm photoelectric ntawm lub photodetector raws li graphene nanoribbons / Al₂O₃ / ib leeg siv lead ua silicon, cov kws tshawb fawb tau sim nws qhov zoo li qub (tam sim no-voltage nkhaus) thiab cov yam ntxwv cov lus teb (tam sim no-lub sij hawm nkhaus). Txhawm rau ntsuas qhov ntsuas qhov muag ntawm cov yam ntxwv ntawm graphene nanoribbon / Al₂O₃ / monocrystalline silicon heterostructure photodetector nyob rau hauv qhov sib txawv ntawm qhov sib txawv voltages, cov kws tshawb fawb tau ntsuas cov lus teb tam sim no ntawm lub cuab yeej ntawm 0 V, -1 V, -3 V thiab -5 V biases, nrog lub zog kho qhov muag .8 / W². Lub photocurrent nce nrog qhov rov qab tsis ncaj ncees lawm thiab qhia tau hais tias cov lus teb ceev ceev ntawm txhua qhov kev tsis sib haum xeeb.

Thaum kawg, cov kws tshawb fawb tau tsim cov duab kos duab thiab ua tiav nws tus kheej-powered imaging ntawm luv-yoj infrared. Lub kaw lus ua haujlwm nyob rau hauv xoom kev tsis ncaj ncees thiab tsis muaj lub zog siv txhua. Lub peev xwm ntawm cov duab thaij duab tau raug tshuaj xyuas siv lub npog ntsej muag dub nrog tsab ntawv "T" qauv (raws li pom hauv daim duab 1).

Hauv kev xaus, qhov kev tshawb fawb no tau ua tiav kev tsim cov duab thaij duab tus kheej raws li graphene nanoribbons thiab ua tiav cov ntaub ntawv-tawg cov lus teb. Lub caij no, cov kws tshawb fawb tau ua tiav qhov kev sib txuas lus kho qhov muag thiab cov duab muaj peev xwm ntawm qhov noheev teb photodetector. Qhov kev tshawb fawb tau ua tiav tsis yog tsuas yog muab txoj hauv kev ua tau zoo rau kev txhim kho ntawm graphene nanoribbons thiab silicon-based optoelectronic li, tab sis kuj qhia tau tias lawv ua tau zoo heev raws li tus kheej-powered luv-wave infrared photodetectors.