Kev ua haujlwm siab heev uas tsav tus kheejlub tshuab ntes duab infrared
infraredlub tshuab ntes duabmuaj cov yam ntxwv ntawm kev muaj peev xwm tiv thaiv kev cuam tshuam zoo, muaj peev xwm paub lub hom phiaj zoo, ua haujlwm txhua lub caij thiab zais zoo. Nws tab tom ua lub luag haujlwm tseem ceeb hauv cov teb xws li tshuaj, tub rog, thev naus laus zis thiab kev tsim kho ib puag ncig. Ntawm lawv, tus kheej tsav tshebkev tshawb nrhiav photoelectricCov chip uas tuaj yeem ua haujlwm tau ywj pheej yam tsis muaj lub zog ntxiv sab nraud tau nyiam kev saib xyuas ntau hauv kev tshawb nrhiav infrared vim nws qhov kev ua tau zoo tshwj xeeb (xws li kev ywj pheej ntawm lub zog, kev nkag siab siab thiab kev ruaj khov, thiab lwm yam). Qhov sib txawv, cov chips nrhiav pom photoelectric ib txwm muaj, xws li silicon-based lossis narrowbandgap semiconductor-based infrared chips, tsis yog tsuas yog xav tau cov hluav taws xob ntxiv los tsav kev sib cais ntawm cov neeg nqa khoom photogenerated los tsim cov photocurrents, tab sis kuj xav tau cov txheej txheem txias ntxiv los txo cov suab nrov thermal thiab txhim kho kev teb. Yog li ntawd, nws tau dhau los ua qhov nyuaj rau ua kom tau raws li cov tswv yim tshiab thiab cov kev xav tau ntawm tiam tom ntej ntawm cov chips nrhiav pom infrared yav tom ntej, xws li kev siv hluav taws xob tsawg, me me, tus nqi qis thiab kev ua tau zoo siab.
Tsis ntev los no, cov pab pawg tshawb fawb los ntawm Tuam Tshoj thiab Sweden tau tshaj tawm ib qho tshiab pin heterojunction self-driven short-wave infrared (SWIR) photoelectric detection chip raws li graphene nanoribbon (GNR) zaj duab xis / alumina / single crystal silicon. Nyob rau hauv qhov ua ke ntawm cov nyhuv optical gating tshwm sim los ntawm heterogeneous interface thiab lub teb hluav taws xob ua ke, lub chip tau ua pov thawj ultra-siab teb thiab kev ua tau zoo ntawm xoom bias voltage. Lub photoelectric detection chip muaj A teb tus nqi siab txog li 75.3 A / W hauv hom tus kheej tsav, tus nqi nrhiav tau ntawm 7.5 × 10¹⁴ Jones, thiab sab nraud quantum efficiency ze li ntawm 104%, txhim kho kev ua tau zoo ntawm tib hom silicon-raws li chips los ntawm cov ntaub ntawv 7 xaj ntawm qhov loj. Tsis tas li ntawd, nyob rau hauv hom tsav tsheb ib txwm muaj, lub chip tus nqi teb, tus nqi nrhiav tau, thiab sab nraud quantum efficiency yog txhua yam siab txog li 843 A / W, 10¹⁵ Jones, thiab 105% feem, tag nrho cov no yog cov nqi siab tshaj plaws tau tshaj tawm hauv kev tshawb fawb tam sim no. Lub caij no, qhov kev tshawb fawb no kuj tau ua pov thawj txog kev siv lub tshuab photoelectric detection chip hauv kev sib txuas lus optical thiab infrared imaging, qhia txog nws lub peev xwm loj heev.
Yuav kom kawm tau txog kev ua haujlwm ntawm lub photodetector raws li graphene nanoribbons /Al₂O₃/ ib leeg siv lead ua silicon, cov kws tshawb fawb tau sim nws cov lus teb static (current-voltage curve) thiab dynamic characteristic responses (current-time curve). Txhawm rau soj ntsuam cov yam ntxwv ntawm optical response ntawm graphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector nyob rau hauv ntau yam bias voltages, cov kws tshawb fawb tau ntsuas qhov dynamic current response ntawm lub cuab yeej ntawm 0 V, -1 V, -3 V thiab -5 V biases, nrog rau optical power density ntawm 8.15 μW/cm². Lub photocurrent nce nrog rau qhov reverse bias thiab qhia txog kev teb ceev ceev ntawm txhua qhov bias voltages.
Thaum kawg, cov kws tshawb fawb tau tsim ib lub tshuab thaij duab thiab ua tiav kev thaij duab ntawm cov duab luv luv infrared. Lub tshuab ua haujlwm hauv qab xoom bias thiab tsis siv hluav taws xob hlo li. Lub peev xwm thaij duab ntawm lub photodetector tau soj ntsuam siv lub ntsej muag dub nrog tus qauv "T" (raws li pom hauv Daim Duab 1).
Xaus lus, qhov kev tshawb fawb no tau ua tiav los tsim cov photodetectors uas siv graphene nanoribbons thiab ua tiav cov lus teb siab tshaj plaws. Lub caij no, cov kws tshawb fawb tau ua tiav qhia txog kev sib txuas lus optical thiab kev thaij duab ntawm qhov nophotodetector teb tau zoo heevQhov kev tshawb fawb no tsis yog tsuas yog muab ib txoj hauv kev siv tau zoo rau kev tsim cov graphene nanoribbons thiab cov khoom siv silicon-based optoelectronic xwb, tab sis kuj qhia txog lawv cov kev ua tau zoo heev ua cov photodetectors luv luv uas siv hluav taws xob.
Lub sijhawm tshaj tawm: Plaub Hlis-28-2025