Lub koob yees duab infrared avalanche qis qis

Qhov qis qis infraredlub tshuab ntes duab av qeeg

Lub tshuab ntsuas infrared avalanche photodetector (APD photodetector) yog ib chav kawm ntawmcov khoom siv semiconductor photoelectricuas tsim cov txiaj ntsig siab los ntawm kev sib tsoo ionization nyhuv, yog li ua tiav qhov muaj peev xwm nrhiav tau ntawm ob peb photons lossis txawm tias ib qho photons. Txawm li cas los xij, hauv cov qauv APD photodetector ib txwm muaj, cov txheej txheem tsis sib npaug ntawm cov neeg nqa khoom tawg ua rau poob zog, xws li qhov hluav taws xob avalanche threshold feem ntau yuav tsum ncav cuag 50-200 V. Qhov no ua rau muaj kev thov ntau dua rau lub cuab yeej tsav hluav taws xob thiab kev tsim hluav taws xob nyeem tawm, ua rau cov nqi nce ntxiv thiab txwv cov ntawv thov dav dua.

Tsis ntev los no, kev tshawb fawb Suav tau tshaj tawm ib qho qauv tshiab ntawm avalanche ze infrared detector nrog lub zog qis avalanche threshold voltage thiab siab rhiab heev. Raws li tus kheej-doping homojunction ntawm atomic txheej, lub avalanche photodetector daws qhov teeb meem scattering tshwm sim los ntawm interface defect xeev uas tsis zam tau hauv heterojunction. Lub caij no, lub zog hauv zos "peak" hluav taws xob tshwm sim los ntawm kev txhais lus symmetry tawg yog siv los txhim kho kev sib cuam tshuam coulomb ntawm cov neeg nqa khoom, tswj qhov tawm-dav hlau phonon hom dominated scattering, thiab ua tiav qhov ua tau zoo ob npaug ntawm cov neeg nqa khoom tsis sib npaug. Ntawm chav tsev kub, lub zog threshold yog ze rau qhov txwv theoretical Eg (Eg yog qhov sib txawv ntawm semiconductor) thiab qhov rhiab heev ntawm kev ntes infrared avalanche detector yog txog li 10000 photon theem.

Txoj kev tshawb fawb no yog ua raws li atom-layer self-doped tungsten diselenide (WSe₂) homojunction (two-dimensional transition metal chalcogenide, TMD) ua ib qho gain medium rau charge carrier avalanches. Qhov spatial translational symmetry breaking yog ua tiav los ntawm kev tsim ib qho topography step mutation los ua kom muaj zog hauv zos "spike" electric field ntawm qhov mutant homojunction interface.

Ntxiv mus, qhov tuab ntawm atomic tuaj yeem tiv thaiv lub tshuab tawg uas tswj hwm los ntawm hom phonon, thiab paub txog kev ua kom nrawm thiab sib npaug ntawm cov neeg nqa khoom tsis sib npaug nrog kev poob qis heev. Qhov no coj lub zog avalanche threshold ntawm chav tsev kub ze rau qhov kev txwv theoretical piv txwv li cov khoom siv semiconductor bandgap Piv txwv li. Lub zog avalanche threshold tau txo qis los ntawm 50 V mus rau 1.6 V, tso cai rau cov kws tshawb fawb siv cov voj voog digital qis-voltage laus los tsav lub avalanche.lub tshuab ntes duabnrog rau cov diodes tsav thiab transistors. Txoj kev tshawb fawb no paub txog kev hloov pauv thiab kev siv cov zog tsis sib npaug los ntawm kev tsim cov nyhuv qis qis avalanche multiplication, uas muab lub zeem muag tshiab rau kev txhim kho ntawm tiam tom ntej ntawm kev nkag siab siab, qis qis thiab siab gain avalanche infrared detection technology.