OFC2024 cov duab ntes

Niaj hnub no cia peb los saib OFC2024photodetectors, uas feem ntau suav nrog GeSi PD/APD, InP SOA-PD, thiab UTC-PD.

1. UCDAVIS paub txog qhov tsis muaj zog resonant 1315.5nm tsis-symmetric Fabry-Perotlub tshuab ntes duabnrog lub peev xwm me me heev, kwv yees li 0.08fF. Thaum qhov kev cuam tshuam yog -1V (-2V), qhov tsaus ntuj tam sim no yog 0.72 nA (3.40 nA), thiab qhov teb yog 0.93a /W (0.96a /W). Lub zog kho qhov muag saturated yog 2 mW (3 mW). Nws tuaj yeem txhawb nqa 38 GHz kev sim cov ntaub ntawv ceev ceev.
Daim duab hauv qab no qhia txog cov qauv ntawm AFP PD, uas muaj cov waveguide txuas nrog Ge-on-Si photodetectornrog rau pem hauv ntej SOI-Ge waveguide uas ua tiav > 90% hom kev sib txuas nrog kev cuam tshuam ntawm <10%. Sab nraub qaum yog Bragg reflector faib (DBR) nrog kev cuam tshuam ntawm > 95%. Los ntawm kev tsim qhov chaw zoo tshaj plaws (round-trip theem sib phim mob), kev cuam tshuam thiab kev sib kis ntawm AFP resonator tuaj yeem raug tshem tawm, ua rau kev nqus ntawm Ge detector mus txog ze li ntawm 100%. Tshaj tag nrho 20nm bandwidth ntawm lub hauv paus wavelength, R + T <2% (-17 dB). Qhov dav Ge yog 0.6µm thiab lub peev xwm kwv yees li 0.08fF.

2, Huazhong University of Science thiab Technology tau tsim cov silicon germaniumphotodiode av qeeg, bandwidth > 67 GHz, nce > 6.6. Lub SACMAPD photodetectorCov qauv ntawm transverse pipin junction yog tsim los ntawm lub platform silicon optical. Intrinsic germanium (i-Ge) thiab intrinsic silicon (i-Si) ua haujlwm ua lub teeb absorbing txheej thiab electron doubling txheej, feem. Lub cheeb tsam i-Ge nrog qhov ntev ntawm 14µm lav qhov txaus lub teeb absorption ntawm 1550nm. Lub cheeb tsam me me i-Ge thiab i-Si yog qhov zoo rau kev nce qhov photocurrent ceev thiab nthuav dav bandwidth nyob rau hauv high bias voltage. Daim ntawv qhia qhov muag APD tau ntsuas ntawm -10.6 V. Nrog lub zog optical nkag ntawm -14 dBm, daim ntawv qhia qhov muag ntawm 50 Gb / s thiab 64 Gb / s OOK teeb liab tau qhia hauv qab no, thiab SNR ntsuas yog 17.8 thiab 13.2 dB, feem.

3. IHP 8-nti BiCMOS cov kab tsav qhia tau hais tias muaj germaniumPD photodetectornrog rau qhov dav ntawm fin li ntawm 100 nm, uas tuaj yeem tsim lub zog hluav taws xob siab tshaj plaws thiab lub sijhawm luv tshaj plaws ntawm photocarrier drift. Ge PD muaj OE bandwidth ntawm 265 GHz @ 2V @ 1.0mA DC photocurrent. Cov txheej txheem ntws tau qhia hauv qab no. Qhov tshwj xeeb tshaj plaws yog tias cov tshuaj SI sib xyaw ion implantation ib txwm muaj raug tso tseg, thiab cov txheej txheem etching loj hlob tau txais yuav kom tsis txhob muaj kev cuam tshuam ntawm ion implantation ntawm germanium. Qhov tsaus ntuj tam sim no yog 100nA, R = 0.45A / W.
4, HHI qhia txog InP SOA-PD, uas muaj SSC, MQW-SOA thiab lub tshuab ntsuas ceev ceev. Rau O-band. PD muaj qhov teb ntawm 0.57 A/W nrog tsawg dua 1 dB PDL, thaum SOA-PD muaj qhov teb ntawm 24 A/W nrog tsawg dua 1 dB PDL. Qhov bandwidth ntawm ob qho yog ~ 60GHz, thiab qhov sib txawv ntawm 1 GHz tuaj yeem raug suav tias yog qhov zaus resonance ntawm SOA. Tsis muaj cov qauv cuam tshuam tau pom hauv daim duab qhov muag tiag tiag. SOA-PD txo qhov xav tau lub zog kho qhov muag los ntawm kwv yees li 13 dB ntawm 56 GBaud.

5. ETH siv Hom II txhim kho GaInAsSb/InP UTC-PD, nrog rau bandwidth ntawm 60GHz @ xoom bias thiab lub zog tso zis siab ntawm -11 DBM ntawm 100GHz. Txuas ntxiv ntawm cov txiaj ntsig yav dhau los, siv GaInAsSb lub peev xwm thauj hluav taws xob zoo dua. Hauv daim ntawv no, cov txheej nqus tau zoo suav nrog GaInAsSb uas muaj doped ntau ntawm 100 nm thiab GaInAsSb uas tsis muaj 20 nm. Cov txheej NID pab txhim kho qhov kev teb tag nrho thiab tseem pab txo qhov capacitance tag nrho ntawm lub cuab yeej thiab txhim kho bandwidth. 64µm2 UTC-PD muaj bandwidth xoom-bias ntawm 60 GHz, lub zog tso zis ntawm -11 dBm ntawm 100 GHz, thiab tam sim no saturation ntawm 5.5 mA. Ntawm qhov rov qab bias ntawm 3 V, bandwidth nce mus txog 110 GHz.

6. Innolight tau tsim cov qauv teb zaus ntawm germanium silicon photodetector raws li kev xav txog tag nrho cov cuab yeej doping, kev faib hluav taws xob thiab lub sijhawm hloov pauv ntawm cov duab. Vim yog qhov xav tau lub zog nkag loj thiab bandwidth siab hauv ntau daim ntawv thov, cov tswv yim fais fab optical loj yuav ua rau bandwidth txo qis, qhov kev coj ua zoo tshaj plaws yog txo qhov concentration ntawm cov neeg nqa khoom hauv germanium los ntawm kev tsim qauv.

7, Tsinghua University tau tsim peb hom UTC-PD, (1) 100GHz bandwidth double drift layer (DDL) qauv nrog lub zog saturation siab UTC-PD, (2) 100GHz bandwidth double drift layer (DCL) qauv nrog kev teb siab UTC-PD, (3) 230 GHZ bandwidth MUTC-PD nrog lub zog saturation siab, Rau ntau daim ntawv thov sib txawv, lub zog saturation siab, bandwidth siab thiab kev teb siab yuav pab tau yav tom ntej thaum nkag mus rau 200G era.