Kev Tshawb Fawb Txog Kev Nce Qib ntawm InGaAs photodetector

Kev Tshawb Fawb Txog Kev Nce Qib ntawmInGaAs photodetector

Nrog rau kev loj hlob ntawm kev sib txuas lus cov ntaub ntawv xa mus, cov thev naus laus zis sib txuas lus tau hloov cov thev naus laus zis sib txuas lus hluav taws xob ib txwm muaj thiab tau dhau los ua cov thev naus laus zis tseem ceeb rau kev sib kis ceev ceev nruab nrab thiab ntev. Raws li cov khoom tseem ceeb ntawm qhov kawg tau txais optical, lublub tshuab ntes duabmuaj cov kev xav tau ntau dua rau nws qhov kev ua haujlwm ceev ceev. Ntawm lawv, lub waveguide coupled photodetector yog me me, siab bandwidth, thiab yooj yim rau kev sib xyaw ua ke ntawm-chip nrog lwm cov khoom siv optoelectronic, uas yog qhov kev tshawb fawb tsom mus rau kev tshawb fawb ntawm high-speed photodetection. thiab yog cov photodetectors sawv cev tshaj plaws hauv cov kab sib txuas lus ze-infrared.

InGaAs yog ib qho ntawm cov ntaub ntawv zoo tshaj plaws rau kev ua tiav kev kub ceev thiabcov duab thaij teb tau zoo. Ua ntej, InGaAs yog cov khoom siv semiconductor bandgap ncaj qha, thiab nws qhov dav bandgap tuaj yeem tswj tau los ntawm qhov sib piv ntawm In thiab Ga, ua kom pom cov teeb liab optical ntawm ntau qhov wavelengths. Ntawm lawv, In0.53Ga0.47As zoo kawg nkaus phim nrog InP substrate lattice thiab muaj lub zog nqus teeb pom kev zoo heev hauv cov kab sib txuas lus optical. Nws yog qhov siv dav tshaj plaws hauv kev npaj ntawm photodetector thiab kuj muaj qhov tsaus ntuj tam sim no thiab kev ua haujlwm zoo tshaj plaws. Qhov thib ob, ob qho tib si InGaAs thiab InP cov ntaub ntawv muaj qhov ceev ceev electron drift siab, nrog lawv cov electron drift velocities saturated ob qho tib si kwv yees li 1 × 107cm / s. Lub caij no, nyob rau hauv cov teb hluav taws xob tshwj xeeb, InGaAs thiab InP cov ntaub ntawv qhia txog electron velocity overshoot teebmeem, nrog lawv cov overshoot velocities ncav cuag 4 × 107cm / s thiab 6 × 107cm / s feem. Nws yog qhov ua rau kom ua tiav qhov bandwidth hla siab dua. Tam sim no, InGaAs photodetectors yog cov photodetectors tseem ceeb tshaj plaws rau kev sib txuas lus optical. Cov khoom siv ntes qhov chaw me dua, rov qab tshwm sim, thiab cov khoom siv bandwidth siab kuj tau tsim tawm, feem ntau yog siv rau hauv cov ntawv thov xws li kev kub ceev thiab kev kub saturation.

Txawm li cas los xij, vim muaj kev txwv ntawm lawv cov txheej txheem sib txuas, cov khoom siv ntes qhov chaw nyuaj rau kev sib koom ua ke nrog lwm cov khoom siv optoelectronic. Yog li ntawd, nrog rau qhov kev thov nce ntxiv rau kev sib koom ua ke optoelectronic, waveguide coupled InGaAs photodetectors nrog kev ua tau zoo heev thiab tsim nyog rau kev sib koom ua ke tau maj mam dhau los ua qhov tseem ceeb ntawm kev tshawb fawb. Ntawm lawv, kev lag luam InGaAs photodetector modules ntawm 70GHz thiab 110GHz yuav luag txhua tus txais yuav cov qauv sib txuas waveguide. Raws li qhov sib txawv ntawm cov ntaub ntawv substrate, waveguide coupled InGaAs photodetectors tuaj yeem faib ua ob hom: INP-based thiab Si-based. Cov khoom siv epitaxial ntawm InP substrates muaj qhov zoo thiab tsim nyog dua rau kev tsim cov khoom siv ua tau zoo. Txawm li cas los xij, rau III-V pawg ntaub ntawv cog lossis sib txuas ntawm Si substrates, vim muaj ntau yam tsis sib xws ntawm InGaAs cov ntaub ntawv thiab Si substrates, cov khoom siv lossis interface zoo tsis zoo, thiab tseem muaj chaw ntau rau kev txhim kho hauv kev ua tau zoo ntawm cov khoom siv.

Lub cuab yeej siv InGaAsP es tsis yog InP ua cov khoom siv hauv thaj chaw depletion. Txawm hais tias nws txo qhov ceev ntawm cov electrons mus rau qee qhov, nws txhim kho kev sib txuas ntawm lub teeb pom kev los ntawm lub waveguide mus rau thaj chaw nqus. Tib lub sijhawm, txheej InGaAsP N-hom tiv tauj raug tshem tawm, thiab muaj qhov sib txawv me me ntawm txhua sab ntawm P-hom nto, ua kom zoo dua qhov kev txwv ntawm lub teeb pom kev. Nws yog qhov ua rau lub cuab yeej ua tiav qhov kev teb siab dua.