Kev Tshawb Fawb Kev Txhim Kho ntawm InGaAs photodetector

Kev Tshawb Fawb Kev Txhim Kho ntawmInGaAs photodetector

Nrog kev loj hlob ntawm kev loj hlob ntawm kev sib txuas lus cov ntaub ntawv kis tau tus mob, optical interconnection technology tau hloov cov tsoos hluav taws xob interconnection technology thiab tau dhau los ua cov thev naus laus zis tseem ceeb rau nruab nrab thiab ntev-ntev-tsawg high-speed kis tau tus mob. Raws li cov ntsiab lus tseem ceeb ntawm qhov kev txais kho qhov muag kawg, lubphotodetectormuaj kev xav tau ntau dua rau nws txoj kev ua haujlwm siab. Ntawm lawv, lub waveguide coupled photodetector yog me me, siab nyob rau hauv bandwidth, thiab yooj yim rau kev koom ua ke on-chip nrog rau lwm yam optoelectronic li, uas yog kev tshawb fawb tsom ntawm high-speed photodetection. thiab yog tus sawv cev tshaj plaws photodetectors nyob ze-infrared kev sib txuas lus band.

InGaAs yog ib qho ntawm cov khoom siv zoo tshaj plaws rau kev ua tiav high-speed thiabhigh-response photodetectors. Ua ntej, InGaAs yog cov khoom siv ncaj qha bandgap semiconductor, thiab nws qhov dav bandgap tuaj yeem tswj hwm los ntawm qhov sib piv ntawm In thiab Ga, ua kom pom cov teeb liab kho qhov muag ntawm qhov sib txawv wavelengths. Ntawm lawv, In0.53Ga0.47As zoo sib xws nrog InP substrate lattice thiab muaj lub teeb pom kev zoo heev hauv kev sib txuas lus optical band. Nws yog qhov siv dav tshaj plaws hauv kev npaj ntawm photodetector thiab tseem muaj qhov zoo tshaj plaws tsaus nti tam sim no thiab kev ua haujlwm zoo. Qhov thib ob, ob qho tib si InGaAs thiab InP cov ntaub ntawv muaj cov hluav taws xob nrawm nrawm, nrog rau lawv cov hluav taws xob saturated drift velocities ob qho tib si kwv yees li 1 × 107cm / s. Lub caij no, nyob rau hauv cov chaw hluav taws xob tshwj xeeb, InGaAs thiab InP cov ntaub ntawv nthuav tawm cov teeb meem hluav taws xob tshaj tawm, nrog rau lawv cov kev tshaj tawm dhau mus txog 4 × 107cm / s thiab 6 × 107cm / s feem. Nws yog qhov tsim nyog rau kev ua tiav qhov kev hla ntau dua bandwidth. Tam sim no, InGaAs photodetectors yog qhov tseem ceeb tshaj plaws photodetectors rau kev sib txuas lus kho qhov muag. Qhov me me, qhov xwm txheej rov qab, thiab cov khoom siv hluav taws xob siab ntawm qhov chaw ntes tau kuj tau tsim, feem ntau yog siv rau hauv cov ntawv thov xws li kev kub ceev thiab siab saturation.

Txawm li cas los xij, vim muaj kev txwv ntawm lawv txoj kev sib txuas, qhov teeb meem ntawm qhov chaw ntes tau nyuaj rau kev koom ua ke nrog lwm cov khoom siv optoelectronic. Yog li ntawd, nrog rau qhov kev thov ntau ntxiv rau kev sib koom ua ke optoelectronic, waveguide txuas nrog InGaAs photodetectors nrog kev ua tau zoo thiab tsim nyog rau kev sib koom ua ke tau maj mam dhau los ua qhov tseem ceeb ntawm kev tshawb fawb. Ntawm lawv, kev lag luam InGaAs photodetector modules ntawm 70GHz thiab 110GHz yuav luag txhua tus txais yuav waveguide coupling qauv. Raws li qhov sib txawv ntawm cov ntaub ntawv substrate, waveguide txuas nrog InGaAs photodetectors tuaj yeem raug faib ua ob hom: INP-based thiab Si-based. Cov khoom siv epitaxial ntawm InP substrates muaj qhov zoo thiab tsim nyog rau kev tsim cov khoom siv ua haujlwm siab. Txawm li cas los xij, rau pawg III-V cov ntaub ntawv loj hlob lossis sib koom ua ke ntawm Si substrates, vim muaj ntau yam tsis sib xws ntawm InGaAs cov ntaub ntawv thiab Si substrates, cov khoom siv lossis cov khoom siv sib cuam tshuam yog qhov tsis zoo, thiab tseem muaj ntau chav rau kev txhim kho kev ua haujlwm ntawm cov khoom siv.

Cov cuab yeej siv InGaAsP tsis yog InP ua cov khoom siv hauv cheeb tsam depletion. Txawm hais tias nws txo qhov saturation drift tshaj tawm ntawm electrons mus rau qee qhov, nws txhim kho qhov sib txuas ntawm teeb pom kev zoo los ntawm waveguide mus rau thaj tsam nqus. Nyob rau tib lub sijhawm, InGaAsP N-hom kev sib cuag txheej raug tshem tawm, thiab qhov sib txawv me me yog tsim rau ntawm txhua sab ntawm P-hom nto, txhim kho qhov kev txwv ntawm lub teeb pom kev zoo. Nws yog qhov tsim nyog rau lub cuab yeej ua tiav lub luag haujlwm siab dua.