Rau cov khoom siv hluav taws xob raws li silicon, cov duab photodetectors silicon (Si photodetector)

Rau cov optoelectronics uas siv silicon, cov photodetectors silicon

Photodetectorshloov cov teeb liab teeb liab mus rau hauv cov teeb liab hluav taws xob, thiab thaum cov nqi hloov cov ntaub ntawv txuas ntxiv mus zoo dua, cov photodetectors ceev ceev uas sib xyaw nrog cov platforms optoelectronics uas siv silicon tau dhau los ua qhov tseem ceeb rau cov chaw khaws ntaub ntawv tiam tom ntej thiab cov tes hauj lwm sib txuas lus. Tsab xov xwm no yuav muab ib qho kev piav qhia txog cov photodetectors ceev ceev, nrog rau kev hais txog silicon raws li germanium (Ge lossis Si photodetector)cov duab siliconrau kev siv tshuab optoelectronics sib xyaw ua ke.

Germanium yog ib yam khoom siv zoo rau kev nrhiav pom lub teeb infrared ze ntawm silicon platforms vim nws sib xws nrog CMOS cov txheej txheem thiab muaj kev nqus tau zoo heev ntawm cov wavelengths telecommunication. Cov qauv Ge / Si photodetector feem ntau yog tus pin diode, uas cov germanium intrinsic yog sandwiched ntawm P-hom thiab N-hom cheeb tsam.

Cov qauv ntaus ntawv Daim duab 1 qhia txog tus pin ntsug Ge lossisSi photodetectorqauv:

Cov yam ntxwv tseem ceeb suav nrog: germanium absorbing txheej loj hlob ntawm silicon substrate; Siv los sau cov p thiab n sib cuag ntawm cov neeg nqa khoom; Waveguide coupling rau kev nqus lub teeb zoo.

Kev loj hlob ntawm Epitaxial: Kev loj hlob ntawm cov germanium zoo ntawm silicon yog qhov nyuaj vim yog 4.2% lattice mismatch ntawm ob yam khoom. Feem ntau siv ob kauj ruam kev loj hlob: qhov kub qis (300-400 ° C) buffer txheej kev loj hlob thiab qhov kub siab (saum toj no 600 ° C) deposition ntawm germanium. Txoj kev no pab tswj cov xov dislocations los ntawm lattice mismatches. Tom qab kev loj hlob annealing ntawm 800-900 ° C ntxiv txo qhov threading dislocation density mus txog li 10 ^ 7 cm ^ -2. Cov yam ntxwv kev ua tau zoo: Lub Ge / Si PIN photodetector siab tshaj plaws tuaj yeem ua tiav: kev teb, > 0.8A /W ntawm 1550 nm; Bandwidth, > 60 GHz; Tsaus tam sim no, <1 μA ntawm -1 V bias.

Kev koom ua ke nrog cov platforms optoelectronics raws li silicon

Kev koom ua ke ntawmcov duab ceev ceevnrog rau cov platform optoelectronics uas siv silicon ua rau muaj cov khoom siv optical transceivers thiab interconnects siab heev. Ob txoj kev sib koom ua ke tseem ceeb yog raws li nram no: Front-end integration (FEOL), qhov twg lub photodetector thiab transistor raug tsim ua ke rau ntawm silicon substrate uas tso cai rau kev ua haujlwm kub siab, tab sis siv thaj chaw chip. Back-end integration (BEOL). Cov Photodetectors raug tsim rau saum cov hlau kom tsis txhob cuam tshuam nrog CMOS, tab sis tsuas yog txwv rau qhov kub ua haujlwm qis dua.

Daim Duab 2: Kev teb thiab bandwidth ntawm lub tshuab ntes Ge/Si ceev ceev

Daim ntawv thov chaw khaws ntaub ntawv

Cov khoom siv hluav taws xob ceev ceev yog ib qho tseem ceeb hauv tiam tom ntej ntawm kev sib txuas lus hauv chaw khaws ntaub ntawv. Cov ntawv thov tseem ceeb suav nrog: cov khoom siv hluav taws xob optical: 100G, 400G thiab cov nqi siab dua, siv PAM-4 modulation; Alub koob yees duab bandwidth siab(> 50 GHz) yog qhov yuav tsum tau muaj.

Silicon-based optoelectronic integrated circuit: monolithic kev koom ua ke ntawm lub tshuab ntes nrog modulator thiab lwm yam khoom; Lub cav optical compact, ua haujlwm siab.

Kev tsim qauv faib tawm: kev sib txuas ntawm qhov muag pom ntawm kev suav lej faib tawm, kev khaws cia, thiab kev cia khoom; tsav qhov kev xav tau rau cov photodetectors uas siv hluav taws xob zoo, muaj bandwidth siab.

Kev cia siab yav tom ntej

Yav tom ntej ntawm cov photodetectors ceev ceev optoelectronic sib xyaw ua ke yuav qhia cov qauv hauv qab no:

Cov nqi ntaub ntawv siab dua: Tsav tsheb tsim cov 800G thiab 1.6T transceivers; Yuav tsum muaj Photodetectors nrog bandwidths ntau dua 100 GHz.

Kev koom ua ke zoo dua: Kev koom ua ke ib lub chip ntawm cov khoom siv III-V thiab silicon; Kev siv tshuab 3D siab heev.

Cov ntaub ntawv tshiab: Tshawb nrhiav cov ntaub ntawv ob-seem (xws li graphene) rau kev ntes lub teeb ultrafast; Ib qho tshiab Group IV alloy rau kev npog ntev dua.

Cov ntawv thov tshiab: LiDAR thiab lwm yam kev siv sensing yog tsav tsheb txoj kev loj hlob ntawm APD; Microwave photon daim ntawv thov uas xav tau cov photodetectors siab linearity.

Cov photodetectors ceev ceev, tshwj xeeb tshaj yog Ge lossis Si photodetectors, tau dhau los ua tus tsav tsheb tseem ceeb ntawm silicon-based optoelectronics thiab tiam tom ntej optical kev sib txuas lus. Kev nce qib txuas ntxiv hauv cov ntaub ntawv, kev tsim khoom siv, thiab kev sib koom ua ke thev naus laus zis yog qhov tseem ceeb los ua kom tau raws li qhov kev thov bandwidth ntawm cov chaw khaws ntaub ntawv yav tom ntej thiab kev sib txuas lus hauv xov tooj. Raws li thaj chaw txuas ntxiv mus, peb tuaj yeem cia siab tias yuav pom cov photodetectors nrog bandwidth siab dua, suab nrov qis dua, thiab kev sib koom ua ke nrog cov hluav taws xob thiab photonic circuits.