Rau silicon-based optoelectronics, silicon photodetectors
Photodetectorshloov cov teeb liab teeb liab mus rau hauv hluav taws xob teeb liab, thiab raws li cov ntaub ntawv hloov pauv cov nqi txuas ntxiv txhim kho, kev kub ceev photodetectors kev koom ua ke nrog silicon-based optoelectronics platforms tau dhau los ua tus yuam sij rau lwm tiam neeg cov ntaub ntawv chaw thiab kev sib txuas lus. Tsab ntawv xov xwm no yuav muab cov ntsiab lus ntawm cov khoom siv hluav taws xob siab ceev, nrog rau qhov tseem ceeb ntawm silicon raws li germanium (Ge lossis Si photodetector)silicon photodetectorsrau integrated optoelectronics technology.
Germanium yog ib qho khoom siv zoo nkauj rau ze ze lub teeb pom kev ntawm silicon platforms vim tias nws tau sib xws nrog cov txheej txheem CMOS thiab muaj qhov nqus tau zoo heev ntawm kev sib txuas lus wavelengths. Ge/Si photodetector qauv feem ntau yog tus pin diode, nyob rau hauv uas lub intrinsic germanium yog sandwiched ntawm P-hom thiab N-hom cheeb tsam.
Tus qauv ntaus ntawv Daim duab 1 qhia tau hais tias tus pin ntsug ntsug Ge los yogYog photodetectorqauv:
Cov yam ntxwv tseem ceeb muaj xws li: germanium absorbing txheej zus ntawm silicon substrate; Siv los sau p thiab n kev sib cuag ntawm tus neeg nqa khoom; Waveguide coupling rau lub teeb pom kev zoo.
Epitaxial kev loj hlob: Kev loj hlob zoo germanium ntawm silicon yog qhov nyuaj vim yog 4.2% lattice mismatch ntawm ob cov ntaub ntawv. Cov txheej txheem kev loj hlob ob-kauj ruam feem ntau yog siv: qhov kub tsis tshua muaj (300-400 ° C) tsis muaj txheej txheem kev loj hlob thiab kub siab (siab tshaj 600 ° C) tso tawm ntawm germanium. Txoj kev no yuav pab tswj cov threading dislocations tshwm sim los ntawm lattice mismatches. Tom qab kev loj hlob annealing ntawm 800-900 ° C ntxiv txo cov threading dislocation ceev mus txog 10^7 cm^-2. Cov yam ntxwv ntawm kev ua tau zoo: Qhov siab tshaj plaws Ge / Si PIN photodetector tuaj yeem ua tiav: kev teb,> 0.8A / W ntawm 1550 nm; Bandwidth,> 60 GHz; Tsaus tam sim no, <1 μA ntawm -1 V bias.
Kev koom ua ke nrog silicon-based optoelectronics platforms
Kev koom ua ke ntawmhigh-ceev photodetectorsnrog silicon-raws li optoelectronics platforms enables advanced optical transceivers thiab interconnects. Ob txoj kev sib koom ua ke tseem ceeb yog raws li hauv qab no: Kev sib koom ua ke pem hauv ntej-kawg (FEOL), qhov twg lub photodetector thiab transistor yog ib txhij tsim ntawm silicon substrate uas tso cai rau kev ua haujlwm kub, tab sis noj cov nti hauv cheeb tsam. Back-end integration (BEOL). Photodetectors yog tsim nyob rau sab saum toj ntawm cov hlau kom tsis txhob cuam tshuam nrog CMOS, tab sis tsuas yog txwv rau kev ua haujlwm qis dua.
Daim duab 2: Teb thiab bandwidth ntawm high-speed Ge/Si photodetector
Daim ntawv thov Data Center
High-speed photodetectors yog ib qho tseem ceeb nyob rau hauv lub tiam tom ntej ntawm cov ntaub ntawv chaw interconnection. Cov ntawv thov tseem ceeb suav nrog: optical transceivers: 100G, 400G thiab cov nqi siab dua, siv PAM-4 hloov kho; Ahigh bandwidth photodetector(> 50 GHz) yuav tsum tau.
Silicon-raws li optoelectronic integrated circuit: monolithic kev koom ua ke ntawm detector nrog modulator thiab lwm yam khoom; Lub compact, high-kev ua tau zoo optical engine.
Distributed architecture: optical interconnection ntawm faib xam, cia, thiab cia; Tsav qhov kev thov rau lub zog-npaum, high-bandwidth photodetectors.
Kev pom yav tom ntej
Lub neej yav tom ntej ntawm kev sib xyaw optoelectronic high-speed photodetectors yuav qhia cov hauv qab no:
Cov ntaub ntawv siab dua: Tsav txoj kev loj hlob ntawm 800G thiab 1.6T transceivers; Photodetectors nrog bandwidths ntau dua 100 GHz yog xav tau.
Txhim kho kev koom ua ke: Ib qho kev sib xyaw ua ke ntawm III-V cov khoom siv thiab silicon; Advanced 3D integration technology.
Cov ntaub ntawv tshiab: Tshawb nrhiav cov khoom siv ob sab (xws li graphene) rau kev tshawb pom lub teeb ultrafast; Ib pawg tshiab IV alloy rau txuas ntxiv wavelength kev pab them nqi.
Cov ntawv thov tshiab: LiDAR thiab lwm cov ntawv thov kev paub yog tsav kev txhim kho ntawm APD; Microwave photon daim ntaub ntawv yuav tsum tau high linearity photodetectors.
High-speed photodetectors, tshwj xeeb tshaj yog Ge lossis Si photodetectors, tau dhau los ua tus tsav tsheb tseem ceeb ntawm silicon-raws li optoelectronics thiab tiam tom ntej kev sib txuas lus kho qhov muag. Kev nce qib ntxiv hauv cov ntaub ntawv, kev tsim cov cuab yeej, thiab kev sib koom ua ke thev naus laus zis yog qhov tseem ceeb kom ua tau raws li qhov kev xav tau ntawm bandwidth loj hlob ntawm cov chaw khaws ntaub ntawv yav tom ntej thiab kev sib txuas lus hauv xov tooj. Raws li daim teb txuas ntxiv mus ntxiv, peb tuaj yeem cia siab tias yuav pom cov duab thaij duab nrog cov bandwidth siab dua, qis suab nrov, thiab kev sib txuas tsis sib haum nrog cov hluav taws xob thiab photonic circuits.
Post lub sij hawm: Jan-20-2025