Cov qauv ntawm InGaAs photodetector

Cov qauv ntawmInGaAs photodetector

Txij li xyoo 1980, cov kws tshawb fawb hauv tsev thiab txawv teb chaws tau kawm txog cov qauv ntawm InGaAs photodetectors, uas feem ntau muab faib ua peb hom. Lawv yog InGaAs hlau-Semiconductor-hlau photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), thiab InGaAs Avalanche Photodetector (APD-PD). Muaj qhov sib txawv tseem ceeb hauv cov txheej txheem tsim khoom thiab tus nqi ntawm InGaAs photodetectors nrog cov qauv sib txawv, thiab kuj muaj qhov sib txawv loj hauv kev ua haujlwm ntawm lub cuab yeej.

Cov InGaAs hlau-semiconductor-hlaulub tshuab ntes duab, qhia nyob rau hauv Daim Duab (a), yog ib qho qauv tshwj xeeb raws li Schottky junction. Xyoo 1992, Shi et al. siv cov hlau-organic vapor theem epitaxy thev naus laus zis qis (LP-MOVPE) los cog cov txheej epitaxy thiab npaj InGaAs MSM photodetector, uas muaj A siab teb ntawm 0.42 A / W ntawm qhov ntev ntawm 1.3 μm thiab qhov tsaus ntuj tam sim no qis dua 5.6 pA / μm² ntawm 1.5 V. Xyoo 1996, zhang et al. siv cov roj theem molecular beam epitaxy (GSMBE) los cog cov txheej InAlAs-InGaAs-InP epitaxy. Cov txheej InAlAs tau qhia txog cov yam ntxwv resistivity siab, thiab cov xwm txheej kev loj hlob tau ua kom zoo dua los ntawm kev ntsuas X-ray diffraction, yog li ntawd qhov sib txawv ntawm cov txheej InGaAs thiab InAlAs yog nyob rau hauv qhov ntau ntawm 1 × 10⁻³. Qhov no ua rau muaj kev ua haujlwm zoo tshaj plaws ntawm cov khoom siv nrog cov hluav taws xob tsaus nti hauv qab 0.75 pA / μm² ntawm 10 V thiab cov lus teb sai sai txog li 16 ps ntawm 5 V. Tag nrho, MSM qauv photodetector yooj yim thiab yooj yim rau kev koom ua ke, qhia cov hluav taws xob tsaus nti qis (pA kev txiav txim), tab sis cov hlau electrode yuav txo qhov chaw nqus lub teeb zoo ntawm lub cuab yeej, yog li cov lus teb qis dua lwm cov qauv.

Lub InGaAs PIN photodetector ntxig ib txheej intrinsic ntawm P-hom contact txheej thiab N-hom contact txheej, raws li pom hauv Daim Duab (b), uas ua rau qhov dav ntawm thaj chaw depletion nce ntxiv, yog li ntawd radiating ntau electron-hole khub thiab tsim ib lub photocurrent loj dua, yog li nws muaj kev ua tau zoo heev electron conduction. Xyoo 2007, A.Poloczek et al. siv MBE los cog ib txheej buffer qis-kub kom txhim kho qhov roughness ntawm qhov chaw thiab kov yeej qhov lattice mismatch ntawm Si thiab InP. MOCVD tau siv los koom ua ke InGaAs PIN qauv ntawm InP substrate, thiab qhov teb ntawm lub cuab yeej yog li 0.57A /W. Xyoo 2011, Army Research Laboratory (ALR) tau siv PIN photodetectors los kawm txog liDAR imager rau kev navigation, kev tiv thaiv kev cuam tshuam / kev sib tsoo, thiab kev tshawb nrhiav / kev txheeb xyuas lub hom phiaj luv luv rau cov tsheb me me hauv av tsis muaj neeg tsav, koom ua ke nrog lub microwave amplifier chip pheej yig uas tau txhim kho qhov sib piv ntawm lub teeb liab-rau-suab nrov ntawm InGaAs PIN photodetector. Nyob rau hauv lub hauv paus no, xyoo 2012, ALR siv lub tshuab liDAR no rau cov neeg hlau, nrog rau qhov ntau ntawm kev kuaj pom ntau dua 50 m thiab kev daws teeb meem ntawm 256 × 128.

Cov InGaAslub tshuab ntes duab av qeegyog ib hom photodetector nrog qhov nce, cov qauv uas tau pom hauv Daim Duab (c). Cov khub electron-qhov tau txais lub zog txaus nyob rau hauv qhov kev ua ntawm lub zog hluav taws xob hauv thaj chaw ob npaug, yog li ntawd kom sib tsoo nrog lub atom, tsim cov khub electron-qhov tshiab, tsim cov nyhuv avalanche, thiab nce cov neeg nqa khoom tsis sib npaug hauv cov khoom siv. Xyoo 2013, George M siv MBE los cog cov lattice phim InGaAs thiab InAlAs alloys ntawm InP substrate, siv kev hloov pauv hauv cov khoom sib xyaw, epitaxial txheej thickness, thiab doping rau modulated carrier zog kom ua kom zoo tshaj plaws electroshock ionization thaum txo qhov ionization. Ntawm qhov sib npaug tso zis teeb liab nce, APD qhia suab nrov qis dua thiab qis dua qhov tsaus ntuj tam sim no. Xyoo 2016, Sun Jianfeng et al. tau tsim ib pawg ntawm 1570 nm laser nquag imaging experimental platform raws li InGaAs avalanche photodetector. Lub voj voog sab hauv ntawmAPD photodetectortau txais cov echoes thiab ncaj qha tso tawm cov teeb liab digital, ua rau tag nrho lub cuab yeej me me. Cov txiaj ntsig sim tau pom hauv daim duab (d) thiab (e). Daim duab (d) yog daim duab lub cev ntawm lub hom phiaj duab, thiab Daim duab (e) yog daim duab peb-seem. Nws tuaj yeem pom tseeb tias thaj chaw qhov rai ntawm thaj chaw c muaj qhov tob qhov deb nrog thaj chaw A thiab b. Lub platform paub qhov dav ntawm lub zog tsawg dua 10 ns, lub zog ntawm lub zog ib leeg (1 ~ 3) mJ hloov kho tau, lub kaum sab xis ntawm lub lens txais ntawm 2 °, zaus rov ua dua ntawm 1 kHz, qhov piv ntawm lub luag haujlwm ntawm lub cuab yeej ntes ntawm kwv yees li 60%. Ua tsaug rau APD qhov nce photocurrent sab hauv, teb sai, me me, ruaj khov thiab tus nqi qis, APD photodetectors tuaj yeem ua qhov kev txiav txim siab ntawm qhov loj me hauv kev ntes tus nqi dua li PIN photodetectors, yog li tam sim no liDAR feem ntau yog dominated los ntawm avalanche photodetectors.

Zuag qhia tag nrho, nrog rau kev txhim kho sai ntawm InGaAs kev npaj thev naus laus zis hauv tsev thiab txawv teb chaws, peb tuaj yeem siv MBE, MOCVD, LPE thiab lwm yam thev naus laus zis los npaj cov txheej txheem loj zoo InGaAs epitaxial ntawm InP substrate. InGaAs photodetectors qhia txog qhov tsaus ntuj qis thiab teb sai, qhov tsaus ntuj qis tshaj plaws yog qis dua 0.75 pA / μm², qhov teb siab tshaj plaws yog txog li 0.57 A / W, thiab muaj kev teb sai sai (ps order). Kev txhim kho yav tom ntej ntawm InGaAs photodetectors yuav tsom mus rau ob qho hauv qab no: (1) InGaAs epitaxial txheej yog cog ncaj qha rau ntawm Si substrate. Tam sim no, feem ntau ntawm cov khoom siv microelectronic hauv kev ua lag luam yog Si raws li, thiab kev txhim kho kev sib koom ua ke ntawm InGaAs thiab Si raws li yog qhov sib txawv. Kev daws teeb meem xws li lattice mismatch thiab thermal expansion coefficient sib txawv yog qhov tseem ceeb rau kev kawm ntawm InGaAs / Si; (2) Lub tshuab 1550 nm wavelength tau paub tab lawm, thiab qhov ntev wavelength (2.0 ~ 2.5) μm yog qhov kev tshawb fawb yav tom ntej. Nrog rau kev nce ntawm In Cheebtsam, qhov sib txawv ntawm lattice ntawm InP substrate thiab InGaAs epitaxial txheej yuav ua rau muaj kev puas tsuaj loj dua thiab qhov tsis zoo, yog li nws yog qhov tsim nyog los ua kom zoo dua cov txheej txheem ntawm cov khoom siv, txo cov qhov tsis zoo ntawm lattice, thiab txo cov khoom siv tsaus nti.