Tus qauv ntawm InGaAs photodetector

Qauv ntawmInGaAs photodetector

Txij li xyoo 1980s, cov kws tshawb fawb hauv tsev thiab txawv teb chaws tau kawm txog cov qauv ntawm InGaAs photodetectors, uas feem ntau muab faib ua peb hom. Lawv yog InGaAs hlau-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), thiab InGaAs Avalanche Photodetector (APD-PD). Muaj qhov sib txawv tseem ceeb hauv cov txheej txheem tsim khoom thiab tus nqi ntawm InGaAs photodetectors nrog cov qauv sib txawv, thiab tseem muaj qhov sib txawv ntawm cov cuab yeej ua haujlwm.

InGaAs hlau-semiconductor-hlauphotodetector, nyob rau hauv daim duab (a), yog ib tug tshwj xeeb qauv raws li lub Schottky hlws ris. Xyoo 1992, Shi et al. siv cov hlau-organic vapor theem epitaxy tshuab (LP-MOVPE) kom loj hlob epitaxy txheej thiab npaj InGaAs MSM photodetector, uas muaj ib tug siab teb ntawm 0.42 A / W ntawm ib tug wavelength ntawm 1.3 μm thiab ib tug tsaus nti tam sim no qis dua 5.6 pA / μm² ntawm 1.5 V. Xyoo 1996, zhang et al. siv roj theem molecular beam epitaxy (GSMBE) kom loj hlob InAlAs-InGaAs-InP epitaxy txheej. Cov txheej InAlAs tau pom cov yam ntxwv siab tiv taus, thiab cov kev loj hlob tau ua kom zoo dua los ntawm kev ntsuas X-ray diffraction, kom cov lattice mismatch ntawm InGaAs thiab InAlAs txheej nyob rau hauv thaj tsam ntawm 1 × 10⁻³. Qhov no ua rau kev ua tau zoo ntawm cov cuab yeej ua haujlwm nrog qhov tsaus ntuj tam sim no hauv qab 0.75 pA / μm² ntawm 10 V thiab ceev cov lus teb ceev mus txog 16 ps ntawm 5 V. Ntawm tag nrho, MSM qauv photodetector yog qhov yooj yim thiab yooj yim rau kev sib koom ua ke, qhia qhov tsis tshua muaj qhov tsaus ntuj (pA kev txiav txim), tab sis cov hlau electrode yuav txo qhov zoo ntawm lub teeb haum ntawm lub cuab yeej, yog li cov lus teb qis dua lwm cov qauv.

Tus InGaAs PIN photodetector ntxig ib txheej txheej sab hauv nruab nrab ntawm P-hom kev sib cuag txheej thiab N-hom kev sib cuag txheej, raws li qhia hauv daim duab (b), uas ua rau kom qhov dav ntawm thaj tsam depletion, yog li radiating ntau electron-qhov khub thiab tsim ib tug loj photocurrent, yog li nws muaj kev ua tau zoo electron conduction. Nyob rau hauv 2007, A.Poloczek et al. siv MBE los loj hlob txheej txheej tsis kub kub los txhim kho qhov roughness thiab kov yeej cov lattice mismatch ntawm Si thiab InP. MOCVD tau siv los koom ua ke InGaAs PIN qauv ntawm InP substrate, thiab lub teb ntawm lub cuab yeej yog txog 0.57A / W. Hauv xyoo 2011, Tub Rog Kev Tshawb Fawb Kev Tshawb Fawb (ALR) tau siv tus lej PIN photodetectors los kawm txog liDAR imager rau kev taw qhia, kev tiv thaiv kev sib tsoo / kev sib tsoo, thiab kev tshawb nrhiav luv luv / kev txheeb xyuas rau cov tsheb me me hauv av tsis muaj neeg siv, suav nrog tus nqi qis microwave amplifier nti uas txhim kho lub teeb liab-rau-nruab piv piv ntawm InGaAs PIN photodetector. Raws li lub hauv paus no, xyoo 2012, ALR siv liDAR imager no rau cov neeg hlau, nrog rau kev tshawb pom ntau dua 50 m thiab kev daws teeb meem ntawm 256 × 128.

InGaAsLub avalanche photodetectoryog ib hom photodetector nrog nce, cov qauv ntawm uas yog qhia nyob rau hauv daim duab (c). Cov electron-qhov khub tau txais lub zog txaus nyob rau hauv qhov kev txiav txim ntawm hluav taws xob hauv cheeb tsam ob npaug, yog li txhawm rau sib tsoo nrog lub atom, tsim cov khoom siv hluav taws xob tshiab, tsim cov nyhuv avalanche, thiab muab cov khoom tsis sib npaug hauv cov khoom siv. . Nyob rau hauv 2013, George M siv MBE los loj hlob lattice matched InGaAs thiab InAlAs alloys ntawm ib tug InP substrate, siv cov kev hloov nyob rau hauv alloy muaj pes tsawg leeg, epitaxial txheej thickness, thiab doping rau modulated carrier zog mus cuag electroshock ionization thaum txo lub qhov ionization. Ntawm qhov sib npaug tso zis teeb liab nce, APD qhia qis suab nrov thiab qis qis tam sim no. Xyoo 2016, Sun Jianfeng et al. ua ib txheej ntawm 1570 nm laser active imaging kev sim platform raws li InGaAs avalanche photodetector. Internal Circuit Court ntawmAPD photodetectortau txais echoes thiab tso tawm cov teeb liab ncaj qha, ua rau tag nrho cov cuab yeej compact. Cov txiaj ntsig kev sim tau pom hauv FIG. (d) thiab (e). Daim duab (d) yog daim duab lub cev ntawm lub hom phiaj duab, thiab daim duab (e) yog daim duab peb sab. Nws tuaj yeem pom tseeb tias qhov rais cheeb tsam ntawm cheeb tsam c muaj qhov tob tob nrog thaj tsam A thiab b. Lub platform paub txog mem tes dav tsawg dua 10 ns, ib leeg mem tes zog (1 ~ 3) mJ adjustable, tau txais lub lens teb lub kaum sab xis ntawm 2 °, repetition zaus ntawm 1 kHz, ntes lub luag hauj lwm piv ntawm txog 60%. Ua tsaug rau APD lub photocurrent nce, teb ceev ceev, compact loj, durability thiab tsawg tus nqi, APD photodetectors yuav ua tau ib qho kev txiav txim ntawm magnitude ntau dua nyob rau hauv nrhiav kom tau tus lej PIN photodetectors, yog li tam sim no mainstream liDAR mas yog dominated los ntawm avalanche photodetectors.

Zuag qhia tag nrho, nrog rau txoj kev loj hlob sai ntawm InGaAs kev npaj tshuab hauv tsev thiab txawv teb chaws, peb tuaj yeem txawj siv MBE, MOCVD, LPE thiab lwm yam thev naus laus zis los npaj cov cheeb tsam loj-zoo InGaAs epitaxial txheej ntawm InP substrate. InGaAs photodetectors pom qhov tsis tshua muaj qhov tsaus ntuj tam sim no thiab muaj kev ua haujlwm siab, qhov qis tshaj qhov tsaus ntuj tam sim no qis dua 0.75 pA / μm², qhov siab tshaj plaws yog mus txog 0.57 A / W, thiab muaj cov lus teb ceev ceev (ps order). Kev txhim kho yav tom ntej ntawm InGaAs photodetectors yuav tsom rau ob yam hauv qab no: (1) InGaAs epitaxial txheej yog cog ncaj qha rau ntawm Si substrate. Tam sim no, feem ntau ntawm cov khoom siv hluav taws xob microelectronic hauv kev ua lag luam yog Si raws li, thiab kev sib koom ua ke tom qab kev txhim kho ntawm InGaAs thiab Si raws li cov qauv dav dav. Kev daws teeb meem xws li lattice mismatch thiab thermal expansion coefficient sib txawv yog qhov tseem ceeb rau kev kawm ntawm InGaAs/Si; (2) Lub 1550 nm wavelength tshuab tau paub tab, thiab qhov ntev wavelength (2.0 ~ 2.5) μm yog qhov kev tshawb fawb yav tom ntej. Nrog rau kev nce hauv cov khoom, cov lattice mismatch ntawm InP substrate thiab InGaAs epitaxial txheej yuav ua rau muaj kev cuam tshuam loj dua thiab qhov tsis xws luag, yog li nws yog qhov tsim nyog los ua kom zoo dua cov txheej txheem ntawm cov cuab yeej, txo cov lattice tsis xws luag, thiab txo cov cuab yeej tsaus nti tam sim no.