Cov qauv ntawm InGaAs Photodetector

Cov qauv ntawmInGaAs Photodetector
Txij li xyoo 1980, cov kws tshawb fawb tau kawm txog cov qauv ntawm InGaAs photodetectors, uas tuaj yeem muab faib ua peb hom tseem ceeb: InGaAs hlau semiconductor hlauphotodetectors(MSM-PD), InGaAsCov duab ntes PIN(PIN-PD), thiab InGaAscov duab ntes av qeeg(APD-PD). Muaj qhov sib txawv tseem ceeb hauv cov txheej txheem tsim khoom thiab tus nqi ntawm InGaAs photodetectors nrog cov qauv sib txawv, thiab kuj muaj qhov sib txawv tseem ceeb hauv kev ua haujlwm ntawm lub cuab yeej.
Daim duab qhia txog cov qauv ntawm InGaAs hlau semiconductor hlau photodetector tau qhia hauv daim duab, uas yog cov qauv tshwj xeeb raws li Schottky junction. Xyoo 1992, Shi et al. siv cov thev naus laus zis qis-siab hlau organic vapor theem epitaxy (LP-MOVPE) los cog cov txheej epitaxial thiab npaj InGaAs MSM photodetectors. Lub cuab yeej muaj lub zog siab ntawm 0.42 A / W ntawm qhov ntev ntawm 1.3 μ m thiab qhov tam sim no tsaus ntuj ntawm tsawg dua 5.6 pA / μ m ² ntawm 1.5 V. Xyoo 1996, cov kws tshawb fawb tau siv cov roj-theem molecular beam epitaxy (GSMBE) los cog InAlAs InGaAs InP epitaxial txheej, uas tau ua rau muaj cov yam ntxwv tiv taus siab. Cov xwm txheej kev loj hlob tau ua kom zoo dua los ntawm kev ntsuas X-ray diffraction, ua rau muaj kev sib txawv ntawm lattice ntawm InGaAs thiab InAlAs txheej hauv qhov ntau ntawm 1 × 10 ⁻ ³. Yog li ntawd, qhov kev ua tau zoo ntawm lub cuab yeej tau zoo tshaj plaws, nrog rau qhov tsaus ntuj tam sim no tsawg dua 0.75 pA / μ m ² ntawm 10 V thiab qhov teb sai ntawm 16 ps ntawm 5 V. Zuag qhia tag nrho, MSM qauv photodetector muaj cov qauv yooj yim thiab yooj yim rau kev sib koom ua ke, qhia txog qhov tsaus ntuj tam sim no qis dua (pA theem), tab sis cov hlau electrode txo qhov chaw nqus lub teeb zoo ntawm lub cuab yeej, ua rau muaj kev teb qis dua piv rau lwm cov qauv.

Lub InGaAs PIN photodetector muaj ib txheej intrinsic ntxig rau ntawm P-hom contact txheej thiab N-hom contact txheej, raws li pom hauv daim duab, uas ua rau qhov dav ntawm thaj chaw depletion nce ntxiv, yog li ntawd radiates ntau electron qhov khub thiab tsim ib tug loj dua photocurrent, yog li ntawd qhia tau tias zoo heev hluav taws xob conductivity. Xyoo 2007, cov kws tshawb fawb tau siv MBE los cog qis-kub buffer txheej, txhim kho qhov roughness ntawm qhov chaw thiab kov yeej lattice mismatch ntawm Si thiab InP. Lawv tau koom ua ke InGaAs PIN qauv ntawm InP substrates siv MOCVD, thiab lub responsivity ntawm lub cuab yeej yog kwv yees li 0.57 A/W. Xyoo 2011, cov kws tshawb fawb tau siv PIN photodetectors los tsim ib tug luv luv-range LiDAR imaging cuab yeej rau navigation, kev cuam tshuam/kev sib tsoo zam, thiab lub hom phiaj nrhiav/kev lees paub ntawm cov tsheb me me unmanned hauv av. Lub cuab yeej tau koom ua ke nrog ib tug pheej yig microwave amplifier chip, zoo heev txhim kho lub teeb liab-rau-suab nrov piv ntawm InGaAs PIN photodetectors. Vim li no, xyoo 2012, cov kws tshawb fawb tau siv cov cuab yeej LiDAR imaging no rau cov neeg hlau, nrog rau qhov ntau ntawm kev ntes tau ntau dua 50 meters thiab qhov kev daws teeb meem nce mus txog 256 × 128.
InGaAs avalanche photodetector yog ib hom photodetector nrog qhov nce, raws li pom hauv daim duab qauv. Cov khub electron qhov tau txais lub zog txaus nyob rau hauv qhov kev ua ntawm lub teb hluav taws xob hauv thaj chaw ob npaug, thiab sib tsoo nrog cov atoms los tsim cov khub electron qhov tshiab, tsim cov nyhuv avalanche thiab ob npaug ntawm cov neeg nqa khoom tsis sib npaug hauv cov khoom siv. Xyoo 2013, cov kws tshawb fawb tau siv MBE los cog cov lattice phim InGaAs thiab InAlAs alloys ntawm InP substrates, modulating lub zog nqa khoom los ntawm kev hloov pauv hauv cov khoom sib xyaw, epitaxial txheej thickness, thiab doping, maximizing electroshock ionization thaum txo qhov ionization. Hauv qab qhov sib npaug output teeb liab nce, APD qhia txog suab nrov qis thiab qis dua qhov tsaus ntuj tam sim no. Xyoo 2016, cov kws tshawb fawb tau tsim lub platform sim ua haujlwm 1570 nm laser raws li InGaAs avalanche photodetectors. Lub voj voog sab hauv ntawmAPD photodetectortau txais cov echoes thiab ncaj qha tso tawm cov teeb liab digital, ua rau tag nrho cov cuab yeej me me. Cov txiaj ntsig sim tau pom hauv Cov Duab (d) thiab (e). Daim Duab (d) yog daim duab lub cev ntawm lub hom phiaj duab, thiab Daim Duab (e) yog daim duab peb-seem. Nws tuaj yeem pom tseeb tias thaj chaw qhov rais hauv Cheeb Tsam C muaj qhov tob ntawm Cheeb Tsam A thiab B. Lub platform no ua tiav qhov dav ntawm lub zog tsawg dua 10 ns, lub zog hloov pauv ib zaug (1-3) mJ, lub kaum sab xis ntawm 2 ° rau cov iav xa thiab txais, tus nqi rov ua dua ntawm 1 kHz, thiab lub voj voog ua haujlwm ntawm lub tshuab ntes kwv yees li 60%. Ua tsaug rau qhov nce photocurrent sab hauv, kev teb sai, qhov loj me me, kev ruaj khov, thiab tus nqi qis ntawm APD, APD photodetectors tuaj yeem ua tiav tus nqi ntes uas yog ib qho kev txiav txim siab ntawm qhov loj dua li PIN photodetectors. Yog li ntawd, tam sim no cov laser radar feem ntau siv cov photodetectors avalanche.