Vim li cas peb thiaj yuav tsum siv Ge ua lub photodetector

Vim li cas peb thiaj yuav tsum siv Ge ua ib qholub tshuab ntes duab
1, Kev tso chaw yooj yim: Vim li cas nws thiaj li tsim nyog siv Ge ua lub photodetector
Hauv cov kev sib txuas ntawm silicon optical, photodetector yog cov "txhais lus" uas hloov cov teeb liab optical rov qab mus rau hauv cov teeb liab hluav taws xob. Txawm li cas los xij, silicon nws tus kheej muaj bandgap ntawm 1.12 eV thiab yuav luag pob tshab rau 1310/1550 nm kev sib txuas lus bands, yog li tsuas yog germanium (Ge) tuaj yeem qhia tau.
Ge muaj qhov bandgap ncaj qha ntawm 0.8 eV, uas npog qhov kev sib txuas lus O / C band, tab sis muaj 4.2% lattice mismatch nrog silicon. Qhov dislocation density rau kev loj hlob ncaj qha yog siab li 4 × 10 ⁸ cm ⁻ ², thiab tsaus nti tam sim no tsis muaj kiag li; Tib lub sijhawm, Ge muaj qhov bandgap tsis ncaj qha, thiab nws cov coefficient absorption yog ib qho kev txiav txim ntawm qhov loj me qis dua InGaAs, uas yog qhov tsis muaj zog ntuj.
2, Kev tawg ua ntej tseem ceeb: kev sib koom ua ke ntawm waveguide rhuav tshem qhov kev ua tau zoo tsis zoo
Qhov "qhov ntev ntawm kev nqus = txoj kev sau cov ntaub ntawv" ntawm cov duab thaij duab ntsug ib txwm muaj "kev teb bandwidth" seesaw, nrog rau qhov txwv siab tshaj plaws ntawm 7GHz xwb;
Tam sim no, cov kev siv tshuab tseem ceeb tau muab faib ua peb pawg:
Tus pin ntsug: Cov txheej txheem yog qhov yooj yim tshaj plaws thiab tseem ceeb hauv kev lag luam, ua tiav 40Gb / s @ xoom kev tsis ncaj ncees thiab> 60GHz bandwidth;
MSM Hlau Semiconductor Hlau: Tsis tas yuav tsum tau doping kub siab, tuaj yeem koom ua ke hauv backend, muaj tam sim no tsaus nti siab, thiab bandwidth ntau dua 40GHz;
Cov kev hloov pauv siab kawg:Cov duab thaij duab nthwv dej mus ncig(TWPD) thiab cov duab thaij duab ib kab (UTC) yog siv rau cov kev sib txuas microwave photon, sib npaug bandwidth siab thiab photocurrent siab saturation.
3, Cov Khoom Siv thiab Kev Ua Tes Ua Taw: Tig 'Cov Kev Tsis Zoo' mus rau Qhov Zoo
Txhawm rau teb rau qhov tsis sib xws ntawm cov lattice thiab kev ua haujlwm tsis zoo, kev lag luam tau tsim cov kev daws teeb meem zoo:
Ob kauj ruam epitaxy txoj kev: thawj zaug, ib txheej buffer qis-kub ntawm 30-50nm yog loj hlob, thiab tom qab ntawd qhov kub nce mus txog qhov tuab ntawm lub hom phiaj, txo qhov ceev ntawm dislocation mus rau ~ 10 ⁷ cm ⁻ ²;
Kev tsim kho txoj kev nyuaj siab: Qhov sib txawv ntawm cov coefficients thermal expansion ntawm Ge thiab Si yuav ua rau muaj 0.2% biaxial tensile strain hauv zaj duab xis Ge, ua rau muaj kev txo qis ntawm qhov sib txawv ntawm 0.8 eV mus rau 0.77 eV thiab kev nqus ntawm ntug txuas ntxiv los ntawm 1.55 μ m mus rau 1.61 μ m, npog tag nrho C + L band, thiab txawm tias qhov nqus coefficient hauv L band tuaj yeem phim qhov ntawm InGaAs;
Kev koom ua ke CMOS: Nws tseem nyob rau theem tshawb nrhiav. Kev koom ua ke pem hauv ntej (FEOL) yuav tsum tiv taus qhov kub siab tshaj 750 ℃, thaum kev koom ua ke tom qab (BEOL) yog qhov kub thiab txias tab sis tsis muaj cov khoom siv crystal, thiab tseem tsis tau tsim cov kev daws teeb meem loj hlob. Tam sim no, kev lag luam feem ntau siv txoj kev sib xyaw ntawm "90% ib leeg-chip + sab nraudlaser".